, {j nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 picoampere diode BAV45 features ? extremely low leakage current: max. 5 pa ? low diode capacitance ? light insensitive. application ? clamping ? holding ? peak follower ? time delay circuits ? logarithmic amplifiers ? protection of insulated gate field-effect transistors. description silicon diode in a metal to-18 can. it has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. a k fig.1 simplified outlin and symbol. i h ? mam207 e (sot18/15; to-1 8 except for the two leads) caution handle the device with care whilst soldering into the circuit. the extremely low leakage current can only be guaranteed when the bottom is free from solder flux or other contaminations. limiting values in accordance with the absolute maximum rating system (iec 134). symbol vrrm vr if ifrm plot tstg tj parameter repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current total power dissipation storage temperature junction temperature conditions see fig. 2 tamb = 25 c; note 1 min. - - - - - -65 - max. 35 20 50 100 200 +125 125 unit v v ma ma mw c c note 1. device mounted on a fr4 printed-circuit board. n.i .semi-conductors reserves i he right to change test conditions, parameter limit* :md packuge dimensions without notice information furnished by nj scmi-t unductors n believed to he holh accurate awl reliable .11 the time of going to press. however ni semi-conductors .i-.miiiics no responsibility fiir ;iny emirs iir omissions jiscuvured in its u>e n.i seini-coiiilui.li rs cntounaes ii-ti nitrs tn ia il\k ihlashcels ire current hefcre placina urikn
picoampere diode BAV45 electrical characteristics tj = 25 c unless otherwise specified. symbol vf ir cd trr parameter forward voltage reverse current diode capacitance reverse recovery time conditions if = 10 ma; see figs 3 and 4 see fig. 5 vr = 5v vr = 5 v; tj = 80 c vr = 20 v f = 1 mhz; vr = 0; see fig.6 when switched from if = 10 ma to ir = 10 ma; rl = 100 ii; measured at ir = 1 ma; see fig. 7 max. 1 5 250 10 1.3 600 unit v pa pa pa pf ns thermal characteristics symbol rth j-a parameter thermal resistance from junction to ambient; note 1 value 500 unit k/w note 1. device mounted on a fr4 printed-circuit board. picoampere diode BAV45 package outline dimensions in mm. * 048 max _ 00.51 ~r max 5.3 max -12.7 min- 5.8 max fig.8 sot18/15; to-18 (except for the two leads).
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